Structure and Properties of Ti–Si–N Films Deposited by dc Magnetron Cosputtering on Positively Biased Substrates

概要

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Ti-Si-N films containing 0–20 at.% Si were deposited on positively biased Si(100) substrates by dc magnetron cosputtering. The growing films were irradiated by an electron flux, instead of the normally energetic ions. X-ray diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS) results suggested that a metastable Ti(Si)N solid solution with a cubic B1 NaCl-type structure existed in the films containing ${<}10$ at.% Si. With the further addition of Si, the films were characterized as having a two-phase structure, consisting of Ti(Si)N and amorphous Si3N4. The columnar morphology of pure TiN with a preferred orientation of the (111) crystal plane was found to transform into a globular one with random orientation only after the appearance of amorphous Si3N4. Although the positively biased grown films have very small compressive stresses (${<}0.5$ GPa), film mechanical properties were improved by the addition of a small amount of Si. Additionally, film tribological property was also enhanced in the case of positive biases.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-12-15