Energy Distribution of Ions Incident onto a Dc-Biased Substrate in Electron Cyclotron Resonance Sputtering Plasma for SrTiO3 Thin Film Preparation

概要

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The energy distribution of ions (IED) incident onto a dc-biased substrate was measured in an electron cyclotron resonance (ECR) sputtering plasma with mirror magnetic confinement under thin film preparation conditions. It was confirmed that energy $E_{\text{i}}$ of ions incident onto the substrate was nearly proportional to the difference between plasma potential and substrate bias voltage. It was found that $E_{\text{i}}\leq 30$ eV was appropriate for the crystallization of SrTiO3 thin films with high dielectric constant. Energy spread $\Delta E_{\text{i}}$, which was estimated from the full-width at half maximum in the IED, increased with positively increasing bias voltage $V_{\text{b}}$ for $-60$ V $<$ $V_{\text{b}}$ $<$ 0 V, while $E_{\text{i}}$ indicated a decrease away from the sputtering target in the axial direction in correspondence with the variation of the plasma potential.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-01-15