Helicon Wave Plasma Enhanced Sputtering and Application to Synthesis of Carbon Nitride Films(Physics, Process, Instrument & Measurements)

概要

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Production of RF plasma excited by helicon wave in Ar and (Ar+N_2) mixture gases was studied. A dense plasma of the order of 10^<12>〜10^<13>cm^<-3> was obtained through helicon wave excitation at an Ar pressure around 0.1Pa. The DC discharge was enhanced by the helicon wave plasma, and the dense plasma enhanced DC sputtering system was applied to synthesize the carbon nitride film. The bonding state and composition ratio N/C of the sputtered CN_x films were investigated by using x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The N/C radio of more than 0.5 in the sputtered film was achieved, and FTIR spectrum showed an absorption band near 2200cm^<-1> indicating the existence of C≡N covalent bonding.
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