Ti-Al Alloy Films Synthesized by Ion-Beam-Enhanced Deposition(Physics, Process, Instrument & Measurements)
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概要
- 論文の詳細を見る
Ti-Al thin films were prepared by ion beam enhanced deposition (IBED), where the films were prepared by depositing Ti and Al vapor and simultaneous bombardment with Ar ions in the energy range of 2-20keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45-GHz electron-cyclotron-resonance ion source and an electron beam evaporation source. Results on the Rutherford backscattering spectrometry have suggested the presence of intermixing layer between substrate and Ti-Al film deposited with simultaneous bombardment with argon ions. X-ray diffraction patterns indicated the formation of AlTi_3, αTi(Al), βTi(Al) and amorphous-like phases. The phase structure could be determined by the Ar ion energy and the Ar/(Ti+Al) transport ratio.
- 大阪大学の論文
著者
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節原 裕一
国立大学法人大阪大学接合科学研究所
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MIYAKE Shoji
Osaka University
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MAKINO Yukio
Osaka University
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SETSUHARA Yuichi
Osaka University
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Makino Y
Osaka Univ. Osaka Jpn
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KYOU Bunkei
Kinki University
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OHSAKO Hajime
Osaka University
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SAMOTO Hirotaka
Kinki University
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