Property of ECR Process Plasma(Physics, Process, Instrument & Measurement)
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概要
- 論文の詳細を見る
ECR plasma designed for material process by microwave radiation off=2.45GHz was studied experimentally with emphasis on the spatial structure of the plasma. Several magnetic field and chamber configurations were applied and remarkable difference in the plasma parameters and spatial structures was clarified in the hydrogen pressure range of 10^<-2>-10^<-1>Pa. In an appropriate chamber configuration the electron temperature could be controlled from several eV up to 20eV by changing the incident microwave power and/or magnetic field intensity. Local structure of the resonance zones was varified to give strong influence to the plasma property especially to the spatial distribution of the plasma parameters.
- 大阪大学の論文
著者
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Chen W
Mcgill Univ. Pq Can
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Chen W
Welding Research Institute Osaka University
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MIYAKE Shoji
Osaka University
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ARIYASU Tomio
Kansai University
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Ariyasu T
Department Of Electrical Engineering Kansai University
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Shibata Y
Murata Seisakusho Co. Ltd.
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CHEN Wei
Osaka University
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SHIBATA Yoshihiro
Murata Seisakusho Co., Ltd.
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Chen Wei
The Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Chen Wei
Department of Electrical and Computer Engineering, Nagoya Institute Technology
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Chen Wei
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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