Metallization on Polyimide Film by Ion and Vapor Deposition (IVD) Method(Physics, Processes, Instruments & Measurements)
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概要
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A study was performed to investigate the effect of argon ion bombardment for improvement of copper film adhesion on polyimide film substrates. The thin copper films were prepared on polyimide films by evaporation of copper metal and simultaneous irradiation by argon ions with energies in the range of 0.5 to 10.0keV. The argon ion density irradiated at the interface between the copper thin film and the substrate was changed from 5×10^<14> to 5×10^<16>ions/cm^2 in each ion energy range. The adhesion of copper films was evaluated by means of peel strength. The copper films prepared with 0.5keV argon ions have strong adhesion, but the adhesion of copper films with 5.0keV and 10.0keV argon ions was lower than that of copper films prepared without argon ion bombardment. The chemical states of the polyimide film surface and the chemical binding states at the interlayer were evaluated by X-ray photoelectron spectrometry. The structure of the interface between the copper film and the polyimide substrate was analyzed by transmission electron microscopy. The argon ion bombardment carbonized the film surface, and the increase of the carbonization caused the decrease of the adhesion. The increase of the adhesion did not depend on the change of chemical binding states at the interlayer. The interface structures prepared by ion bombardment have a mixed layer consisting of the copper atoms diffused into the substrate and the carbon atoms from the polyimide. The formation of the mixed layer by ion bombardment contributed to improve the copper film adhesion.
- 大阪大学の論文
著者
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MIYAKE Shoji
Osaka University
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SETSUHARA Yuichi
Osaka University
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Ebe Akinori
Osaka University
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SETSUHARA Yuicji
Osaka University
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