Amorphous Hydrogenated Silicon Film Deposited by Reactive Electron Cyclotron Resonance Plasma(Physics, Process, Instruments & Measurements)
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概要
- 論文の詳細を見る
Amorphous hydrogenated silicon (a-Si:H) films were prepared by an electron cyclotron resonance (ECR) plasma in silane and/or hydrogen diluted gases with the pressure of several Pa. In the film formation the local feature of ECR phenomenon was correlated with the film synthesis and the experiments reported here were carried out in a divergent magnetic filed and the microwave power input was varied up to 500W. The effect of the local ECR phenomenon on the film synthesis was discussed with deposition electric property and composition of the films. It was found that the deposition rate and properties of the films changed drastically while their were deposited at different axial position in the plasma. The highest deposition rate was obtain near the axial resonance point with the value of 16 micrometer per hour in the silane plasma at the gas pressure of 4 Pa. Meanwhile the optical gap of the film shown lowest value of 1.74eV. Furthermore it was found that the photo conductivity of the films were also change remarkably while the distance L of the substrate holder and resonance region in axis was changed. The highest photo conductivity was obtained at L=6cm with the value of 1.5×10^<-7>S/cm, where the light intensity was 100μW in 550nm of the wavelength.
- 大阪大学の論文
著者
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Chen W
Mcgill Univ. Pq Can
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Chen W
Welding Research Institute Osaka University
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MIYAKE Shoji
Osaka University
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ARIYASU Tomio
Kansai University
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Ariyasu T
Department Of Electrical Engineering Kansai University
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CHEN Wei
Osaka University
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Chen Wei
The Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Chen Wei
Department of Electrical and Computer Engineering, Nagoya Institute Technology
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Chen Wei
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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