Annealing of Hydrogenated Diamond-like Carbon Films Deposited on Ground Electrode of Plasma Enhanced Chemical Vapor Deposition System
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概要
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Hydrogenated diamond-like carbon (g-DLC:H) films were deposited on silicon on the grounded electrode of plasma enhanced chemical vapor deposition system and then annealed in Ar gas at temperatures of 300–700 °C for $7.2\times 10^{3}$ s after being treated in H2 atmosphere at a temperature of 100 °C for $14.2\times 10^{3}$ s. The H2-treated g-DLC:H films had approximately the same thickness, density, and refractive index as the as-deposited DLC:H films; however, their dielectric constants increased slightly with an increase in H2 gas flow rate. The thicknesses, H contents and dielectric constants of the g-DLC:H films annealed at temperatures above 500 °C became very small, even though their densities and refractive indexes of the films increased with an increase in annealing temperature. The properties of the H2-treated g-DLC:H films had approximately the same annealing temperature dependence as those of g-DLC:H films.
- 2007-09-15
著者
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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Nakatani Takahiro
Faculty of Engineering and HRC, Kansai University, Suita, Osaka 564-8680, Japan
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Miyashita Fumiyoshi
Faculty of Informatics, Kansai University, Takatsuki, Osaka 569-1095, Japan
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