Deposition of Titanium Oxide Films with High Dielectric Constants on Silicon by an Ion Beam Assist Deposition Technique
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概要
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Titanium-dioxide (TiOx) thin films were deposited on n-type Si wafers by an ion beam assist deposition technique utilizing an oxygen ion beam source and a Ti electron beam evaporator. The chemical structure of the TiOx thin films was determined by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, which revealed that the TiOx thin films consisted of rutile TiO2 and O-deficient rutile TiO2 here and throughout. The TiOx films had high dielectric constants ranging from 30$\varepsilon_{0}$ to 160$\varepsilon_{0}$, which depended significantly on substrate temperature and oxygen ion energy.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Nakamura Kazuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Yokota Katuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Sasakawa Tomoohiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Kamatani Toshihiko
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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