Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
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概要
- 論文の詳細を見る
AC surface photovoltage (SPV) responds to damaged layers in n-type silicon (Si) wafers with depleted or inverted surfaces. Excited carriers recombine at broken bonds in a damaged layer, and the ac SPV is then reduced depending on whether slight or heavy damage exists at the Si surface. The ac SPV is related to the thermally modufated reflectance signal and, thus, is qualitatively applicable to nondestructive evaluation of the damaged layer.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Munakata Chusuke
Central Research Laboratory Hitachi Lid.
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Munakata Chusuke
Central Research Laboratory Hitachi Ltd.:(present Address)department Of Electronics Tohoku Institute
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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