Frequency Response of the Strong Inversion Layer in a Silicon Wafer
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概要
- 論文の詳細を見る
Equations for the inversion capacitance and inversion conductance are proposed. These equations introduce an independent response time-constant. By applying these equations to a metal-oxide-Si diode, the diode capacitance equation is derived. This equation well explains both frequency and bias voltage dependencies of the diode capacitance. A time-constant of 0.21 s is obtained for a previous experiment applying this equation.
- 社団法人応用物理学会の論文
- 1983-12-20
著者
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Munakata Chusuke
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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