A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-20

著者

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Itoh H

  Semiconductor Academic Research Center

• HONMA Noriaki

  Central Research Laboratory, Hitachi, Ltd.

• MUNAKATA Chusuke

  Central Research Laboratory, Hitachi, Ltd.

• Itoh Hitoshi

  Semiconductor Academic Research Center

• Honma N

  Central Research Laboratory Hitachi Ltd.

• Honma Noriaki

  Central Research Laboratory Hitachi Lid.

• ITOH Haruo

  Central Research Laboratory, Hitachi Lid.

• Munakata C

  Tohoku Inst. Technol. Sendai Jpn

• Munakata Chusuke

  Central Research Laboratory Hitachi Lid.

• Itoh Haruo

  Central Research Laboratory Hitachi Ltd.

• Munakata Chusuke

  Central Res. Lab. Hitachi Ltd.

関連論文

• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
• Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
• Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
• Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Distortion of Electron-Beam-Recorded Patterns on a Photographic Plate due to Charge-Up
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
• Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
• AC Photovoltaic Measurement of Charge Density Uniformity in Silicon Nitride Film Deposited on Si Wafer
• Fine Chromium Grating Directly Made by Irradiating Electron Beam
• Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
• Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
• Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
• Electron Beam Enhanced Surface Photovoltage
• Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
• Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
• Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
• Effect of Aluminum on Ac Surface Photovoltages in Thermally Oxidized n-Type Silicon Wafers
• Change of Apparent Sensitivity of an Electron Resist Due to Backing Materials
• Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
• Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
• A Novel Method of Electron Beam Recording on a Si Wafer
• Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions
• Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
• Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods
• Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
• Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
• Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
• PH_3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy
• Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
• Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
• Die Verteilung des durch einen Elektronenstrahl ionisierten Ionenstromes im Elektronenstrahl-Apparate
• Measurement of Potential Distribution in a Semiconductor Crystal with an Electron Beam
• Detection of Resistivity Striations in a Ge Crystal with an Electron Beam
• On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
• A Scanning Electron Microscopic Method of Obtaining Electric Field Distributions Using Solid-State Models
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency
• A Failure Analysis of a Gunn Diode with a Scanning Electron Microscope
• Frequency Response of the Strong Inversion Layer in a Silicon Wafer
• The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction
• Analysis of ac Surface Photovoltages in Accumulation Region : Optical Properties of Condensed Matter
• Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
• An Electron Beam Method of Measuring Resistivity Distribution in Semiconductors
• Measurement of Resistance by Means of Electron Beam -III-
• Measurement of Resistance by Means of Electron Beam -II-
• Bulk Electron Voltaic Effect
• A Very Low Electron Temperature Mercury Plasma
• Density Distribution of a Mercury Plasma near an Anchored Cathode Spot
• Measurement of the Homogenity of a Semiconductor with an Electron Beam
• AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals
• Observations of Sand-Blasted Surface of Germanium with a Scanning Electron Microscope
• Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
• Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces

もっと見る 閉じる

スポンサーリンク