Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
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概要
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The majority carrier conductance due to the hole flow towards the surface of a wafer from the bulk has been formulated following the half-sided junction model previously reported. An empirical equation for the carrier drift velocities in very high electric fields has been proposed for the formulation. Besides the conductance, the depletion layer capacitance, interface trap capacitance and conductance are found to be responsible for ac surface photovoltages in the depletion case. The majority carrier conductance can explain the formerly observed conductance of 27 S/m^2 in a 76-mm-diameter 1.0-mΩm oxidized p-type Si wafer. Analysis of the formerly reported surface photovoltages reveals a surface potential, fixed oxide charge density, hole capture cross section and interface trap density of 0.32V, 1.7mC/m^2, 2.0×10^<20> m^2 and 2.0×10^<16>m^<-2> eV^1 respectively.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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Munakata Chusuke
Central Research Laboratory Hitachi Lid.
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Nishimatsu Shigeru
Central Research Laboratory Hitachi Lid.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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