PH_3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy

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Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
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Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
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Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
AC Photovoltaic Measurement of Charge Density Uniformity in Silicon Nitride Film Deposited on Si Wafer
Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
PH_3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy
Q-Switched CO_2 Laser and the Detection with the Pyroelectric Thermal Detector
Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces

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