Enhanced Growth of Thermal Oxide Due to Impurity Absorption from Adjoining Contaminated Silicon Wafers
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概要
- 論文の詳細を見る
Enhanced growth of thermal oxide at high temperature is investigated when a silicon wafer is situated behind an adjoining contaminated one. Impurities reside on the back surface of the wafer due to chucking with a stainless steel plate, depending on the surface roughness. During oxidation, the impurities spread to the adjoining wafers, causing enhanced oxide growth with the convex side up in profile. Chromium and nickel are possibly responsible for this process.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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Yamamoto Masashi
Musashi Works Hitachi Ltd.
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Shimizu Hirofumi
Semiconductor Design And Development Center Hitachi Ltd.
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