Iron-Induced Negative Charge in Thermally Grown Oxide of Silicom Wafers
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概要
- 論文の詳細を見る
An ac surface photovoltage (SPV) is investigated in the thermally-grown silicon (Si) wafers, which are pretreated with an iron (Fe)-contaminated alkaline solution composed of ammonia hydroxide, hydrogen peroxide, and water. The ac SPV appeared in the cleaned and oxidized p-type Si is reduced by the incorporation of Fe into the thermal oxide, which causes the ac SPV being on the rise in n-type Si, depending on Fe concentration. These results prove that a negative charge due to Fe incorporated in the native oxide survives in the thermal oxide.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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SAITOU Shigeaki
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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Saitou S
Toyohashi Univ. Technol. Toyohashi Jpn
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SHIMIZU Hirofumi
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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