Anisotropic Etching Using Reactive Cluster Beams
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概要
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The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 μm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least $1:1000$. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.
- 2010-12-25
著者
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Matsuo Jiro
Quantum Science And Engineering Center Kyoto University
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Seki Toshio
Department Of Cardiovascular Surgery Nara Prefectural Mimuro Hospital
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Aoki Takaaki
Department Of Bioresource Chemistry Obihiro University Of Agriculture And Veterinary Medicine
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Ninomiya Satoshi
Quantum Science And Engineering Center Kyoto University
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Koike Kunihiko
Shiga Technology Center Iwatani International Corp
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Seki Toshio
Department of Nuclear Engineering, Kyoto University, Uji, Kyoto 611-0011, Japan
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Yoshino Yu
Shiga Technology Center, Iwatani Corporation, Moriyama, Shiga 524-0041, Japan
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Senoo Takehiko
Shiga Technology Center, Iwatani Corporation, Moriyama, Shiga 524-0041, Japan
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Matsuo Jiro
Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan
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Ninomiya Satoshi
Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan
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Koike Kunihiko
Shiga Technology Center, Iwatani Corporation, Moriyama, Shiga 524-0041, Japan
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