Polishing of Sidewall Surfaces Using a Gas Cluster Ion Beam
スポンサーリンク
概要
- 論文の詳細を見る
The polishing of silicon sidewalls at an average surface roughness of 0.3 nm is demonstrated for the first time by SF6 gas cluster irradiation at an incident angle of 82 degrees from the sidewalls. A new phenomenon for surface smoothing occurs on material surfaces irradiated by reactive gas clusters at incident angles above 60 degrees from the surface normal. A characteristic of this smoothing phenomenon is that the surface roughness decreases as the chemical reactivity between the material and gas clusters increases, whereas the surface roughness shows an opposite tendency for conventional gas cluster ion beam smoothing at angles below 60 degrees.
- Japan Society of Applied Physicsの論文
- 2004-10-01
著者
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Sato Akinobu
Central Research Laboratory Japan Aviation Electronics Industry Ltd.
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Matsuo Jiro
Quantum Science And Engineering Center Kyoto University
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Seki Toshio
Quantum Science And Engineering Center Kyoto University
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Seki Toshio
Quantum Science and Engineering Center, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Sato Akinobu
Central Research Laboratory, Japan Aviation Electronics Industry, Ltd., 3-1-1 Musashino, Akishima, Tokyo 196-8555, Japan
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Suzuki Akiko
Central Research Laboratory, Japan Aviation Electronics Industry, Ltd., 3-1-1 Musashino, Akishima, Tokyo 196-8555, Japan
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Suzuki Akiko
Central Research Laboratory, Japan Aviation Electronics Industry Ltd., 3-1-1 Musashino, Akishima, Tokyo 196-8555, Japan
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Bourelle Emmanuel
Central Research Laboratory, Japan Aviation Electronics Industry, Ltd., 3-1-1 Musashino, Akishima, Tokyo 196-8555, Japan
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