Pulsed Laser Deposition of Filled Skutterudite LaFe3CoSb12 Thin Films

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概要

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• Polycrystalline LaFe3CoSb12 thin films have been prepared by pulsed laser deposition. Crystallographic data, chemical composition, microscopic film morphology and electrical transport measurements are reported. Although it is difficult to synthesize perfectly filled skutterudite LaFe3CoSb12 in the bulk form, the prepared films are composed of the mono-skutterudite phase with stoichiometric (${\sim}100$% filled) chemical composition. The LaFe3CoSb12 films are highly degenerate semiconductors with carrier density ranging from $6\times 10^{20}$ to $9\times 10^{21}$ cm-3. Observed electrical transport properties of the films are explained in terms of a model in which ionization of interface defects produced between small polycrystalline grains is the origin of carriers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Suzuki Akiko

  Central Research Laboratory, Japan Aviation Electronics Industry Ltd., 3-1-1 Musashino, Akishima, Tokyo 196-8555, Japan

関連論文

• Polishing of Sidewall Surfaces Using a Gas Cluster Ion Beam
• Pulsed Laser Deposition of Filled Skutterudite LaFe3CoSb12 Thin Films

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