Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI

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2000-08-28

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Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices
Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI
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