Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
-
IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
-
Hashimoto J
Nagasaki Univ. Nagasaki Jpn
-
KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
-
Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
-
Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
-
OZAWA Nobuo
VLSI R&D Center, Oki Electric Industry Co., Ltd.
-
Ozawa N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
-
Ozawa Nobuo
Vlsi R&d Center Oki Electric Industry Co. Ltd.
-
MIYAKAWA Yasuhiro
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.
-
HASHIMOTO Jun
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.
-
Miyakawa Yasuhiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
-
Ikegami Naokatsu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
-
HASHIMOTO Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
関連論文
- SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
- Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices
- Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI
- Role of Oxygen in Poly-Si Etching by Cl_2/O_2 Plasmas
- Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
- Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
- Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
- Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
- Roles of Ions and Radicals in Silicon Oxide Etching
- New Characterization of TiSi_2 Local Wiring Technology and Its Impact on Low Power/High Speed Quarter Micron CMOS