Desorption Kinetics of Ar Implanted into Si

概要

論文の詳細を見る
Thermal desorption spectroscopy and transmission electron microscopy were used to study the desorption kinetics of Ar implanted into Si. The Si implanted with Ar ions at the dose of 2×10^<15>/cm^2 under an acceleration energy of 60 kV exhibited two distinct desorption states at temperatures of around 710℃ and 1010℃, while Si samples implanted with a lower Ar dose of 2×10^<14>/cm^2 did not show any distinct desorption states. The first desorption state at the lower temperature was found to be associated with solid phase epitaxial growth of the amorphous layer, and the second state at the higher temperature is concomitant with the epitaxial realignment of microcrystalline Si formed at low temperatures. The activation energies of desorption were evaluated to be 2.35 and 3.91 eV, respectively, for the low-temperature and high-temperature states.
社団法人応用物理学会の論文
1999-02-15