Ikeda S | Tohoku Univ. Sendai‐shi Jpn

スポンサーリンク

概要

• IKEDA Satoshiの詳細を見る
• 同名の論文著者
• Tohoku Univ. Sendai‐shi Jpnの論文著者

関連著者

• Ikeda S

  Tohoku Univ. Sendai‐shi Jpn

• 内田 秀和

  埼玉大学

• Hirashita N

  Oki Electric Industry Co. Ltd. Vlsi R&d Center

• Hirashita Norio

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Hirashita Norio

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Hirashita Norio

  Oki Electric Industry Co. Ltd. Vlsi Research & Development Center

• Hirashita Norio

  Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory

• IKEDA Satoshi

  Oki Electric Industry Co., Ltd., VLSI R&D Center

• UCHIDA Hidetsugu

  Oki Electric Industry Co., Ltd., VLSI R&D Center

• IKEDA Satoshi

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• OKIHARA Masao

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• UCHIDA Hidetsugu

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Okihara Masao

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Uchida Hidetsugu

  Oki Electric Industry Co. Ltd. Vlsi R&d Center

• Ikeda Satoshi

  Oki Electric Industry Co. Ltd. Vlsi R&d Center

• IKEDA Satoshi

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Hirashita Norio

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• UCHIDA Hidetsugu

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• OKIHARA Masao

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

もっと見る 閉じる

著作論文

• A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
• Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

スポンサーリンク