Hirashita Norio | Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory

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著作論文

A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
Transmission Electron Microscopic Studies of TiSi_2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines
Advanced Co Salicide Technology for Sub-0.20μm FD-SOI Devices
Advanced Co Salicide Technology for Sub-0.20 $\mu$m Fully-Depleted SOI Devices
Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films

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