Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films

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概要

• 論文の詳細を見る

• Electrical characteristics of large-grain polysilicon transistors for various grain sizes were examined. The field-effect mobilities of poly-Si transistors were studied based on the thermionic emission model with potential barriers at grain boundaries. Electron mobility within the grains was evaluated and found to be 194 cm^2/V・s. Our result indicates that, using the electron mobility within the grains, the thermionic emission model can be applied to poly-Si films with relatively large grain sizes.

• 社団法人応用物理学会の論文
• 1989-12-20

著者

• Hirashita Norio

  Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory

• KATOH Teruo

  Oki Electric Industry Co., Ltd., VLSI R&D Laboratory

• Katoh Teruo

  Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory

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• Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films

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