Advanced Co Salicide Technology for Sub-0.20 $\mu$m Fully-Depleted SOI Devices
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概要
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The mechanism of buried oxide (BOX) breakdown in fully-depleted silicon-on-insulator (FD SOI) devices is investigated by cross-sectional transmission electron microscopy (XTEM), and pinhole formation in the BOX at the bottom of a contact hole is found to be the predominant reason for this breakdown. Since this it is attributed to nonuniform silicidation of thin SOI films, improvement of silicide surface flatness is strongly required. In this paper, we present the significant effect of our new salicide on the silicide surface structure, which has enabled volume production of 0.20 $\mu$m FD SOI devices. Using this contact-hole-etching-prior-to-the-second-annealing (CHEPSA) cobalt salicide, perfect BOX yield is obtained down to 25-nm-thick SOI on commercially available separation-by-implanted-oxygen (SIMOX) substrates, which falls in the 0.13–0.10 $\mu$m range technology node.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Hirashita Norio
Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory
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Hirashita Norio
Oki Electric Industry Co. Ltd. Vlsi Research Center
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Ichimori Takashi
Oki Electric Industry Co. Ltd. Vlsi Research Center
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- Advanced Co Salicide Technology for Sub-0.20μm FD-SOI Devices
- Advanced Co Salicide Technology for Sub-0.20 $\mu$m Fully-Depleted SOI Devices
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