Advanced Co Salicide Technology for Sub-0.20μm FD-SOI Devices

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Hirashita Norio

  Oki Electric Industry Co. Ltd. Vlsi R&d Laboratory

• Kanamori Jun

  Oki Electric Industry Co. Ltd. Vlsi Research Center

• ICHIMORI Takashi

  Oki Electric Industry Co. Ltd., VLSI Research Center

• Ichimori Takashi

  Oki Electric Industry Co. Ltd. Vlsi Research Center

• HIRASHITA Norio

  Oki Electric Industry Co. Ltd., VLSI Research Center

関連論文

• A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
• Transmission Electron Microscopic Studies of TiSi_2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines
• Advanced Co Salicide Technology for Sub-0.20μm FD-SOI Devices
• Advanced Co Salicide Technology for Sub-0.20 $\mu$m Fully-Depleted SOI Devices
• Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films

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