A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
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概要
- 論文の詳細を見る
We proposed a kinetic model for thermal oxidation of silicon carbide, termed ``silicon and carbon emission model'', taking into account the Si and C emissions from the oxidation interface, which lead to a reduction of interfacial reaction rate. We used this model to calculate oxide growth rates and found that the derived growth rates showed a good fit with the measured rates over the entire oxide thickness for both the C and Si faces. We discussed the difference in oxidation mechanism between these polar faces in terms of the difference in parameter values deduced from the curve fits.
- Japan Society of Applied Physicsの論文
- 2009-02-25
著者
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Hijikata Yasuto
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Sa
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Yaguchi Hiroyuki
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Sa
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Hijikata Yasuto
Saitama University Saitama-shi
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yoshida S
Sharp Corp. Nara Jpn
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Yaguchi Hiroyuki
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
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