Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• SEKIGAWA Toshihiro

  Electrotechnical Laboratory

• Yoshikawa M

  Department Of Electronics University Of Osaka Prefecture

• Fukuda K

  Electrotechnical Lab. Ibaraki Jpn

• YOSHIKAWA Masayuki

  Plasma Research Center, University of Tsukuba

• Yoshikawa Masanobu

  Department Of Applied Physics Faculty Of Engineering Osaka University

• YOSHIKAWA Masahito

  Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment

• YOSHIDA Sadafumi

  Electrotechnical Laboratory

• NAGAI Kiyoko

  Electrotechnical Laboratory

• Yoshikawa Masaaki

  Imra Material R &amp D Co Ltd.

• Sekigawa Toshihiro

  Electron Devices Division Electrotechnical Laboratory

• Sekigawa Toshihiro

  Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria

• Yoshikawa Masahito

  Japan Atomic Energy Research Institute

• FUKUDA Kenji

  Electrotechnical Laboratory

• ARAI Kazuo

  Electrotechnical Laboratory

• Arai K

  Electrotechnical Laboratory

• Yoshikawa M

  Choshu Ind. Co. Ltd. Yamaguchi Jpn

• Yoshida S

  The Second Department Of Internal Medicine Chiba University School Of Medicine

• Nagai Kiyoko

  Electrotechnical Lab.

• Fukuda Kuniya

  Department Of Engineering Physics Faculty Of Engineering Kyoto University

• Sekigawa T

  Electron Devices Division Electrotechnical Laboratory

• Yoshida S

  Sharp Corp. Nara Jpn

• Yoshikawa Manabu

  Department Of Physics Faculty Of Science Yamaguchi University

関連論文

• Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
• Superconductivity in the Pb_2Sr_La_xCu_2O_z System
• Single High-T_c Phase Region of the Bi-Pb-Sr-Ca-Cu-O System
• Diazepam Enhances Production of Diazepam-Binding Inhibitor (DBI), a Negative Saliva Secretion Regulator, Localized in Rat Salivary Gland
• タンデムミラ-GAMMA 10 によるプラズマ閉じ込め
• Cysteinyl Leukotriene Receptor Antagonists Inhibit Tumor Metastasis by Inhibiting Capillary Permeability
• Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
• The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
• Microwave Power Emission from a Beam-Plasma System
• Correlation between High-Power Broadband Microwave Radiation and Strong Langmuir Turbulence in an Intense Relativistic Electron Beam-Plasma System
• Spectroscopic Measurements of Intense Relativistic Electron Beam Driven Turbulence
• Spectroscopic System for Measurememts of Turbulent Electric Fields Originating from Intense Relativistic Electron Beam-Plasma Interactions
• Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
• Calibration of Time- and Space-Resolving Vacuum Ultraviolet Spectrograph for Plasma Diagnostics in the Tandem Mirror GAMMA 10
• Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
• Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
• Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
• Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
• High-Temperature Operation of Silicon Carbide MOSFET
• Annealing Effects on Al and AN-Si Contacts with 3C-SiC
• Great Increase in Antinociceptive Potency of [Leu^5]Enkephalin After Peptidase Inhibition
• The Enhancing Effects of Peptidase Inhibitors on the Antinociceptive Action of [Met^5]Enkephalin-Arg^6-Phe^7 in Rats
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
• Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
• The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
• Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
• Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
• Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
• Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Experimental Observation of the Density Limit in Hot Ion Mode Plasmas of the GAMMA 10 Tandem Mirror
• Absolute Calibration of Space- and TIme-Resolving Flat-Field Vacuum Ultraviolet Spectrograph for Plasma Diagnostics
• Preparation of As-Deposited Bi-Sr-Ca-Cu-O Films with High T_c Superconducting Phase by Metalorganic Chemical Vapor Deposition
• The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
• Effect of Nd422 Addition on Jc in Nd123 Melt-Textured Bulk Superconductor
• Pulsed Field Magnetization of Melt-Processed Y-Ba-Cu-O Bulk Superconductor with No Weak Links
• High-Temperature Superconducting Motor Using Y-Ba-Cu-O Bulk Magnets
• Growth Mode Transition in GaAs/Gap(001)
• Surface Stoichiometry and Reconstruction of GaP(001)
• Growth Process in Initial Stage of GaAs/GaP (001) by Molecular Beam Epitaxy
• Microwave Characteristics of TiO_2-Bi_2O_3 Dielectric Resonator
• Influence of Rare Earth Ions on BaO-TiO_2-Rare Earth Oxide Ceramics for Microwave Applications
• Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC
• Fabrication and High-Field Magneto-Absorption Study of CdTe/Cd_Mn_xTe Multiple Quantum Wells
• Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
• Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
• Time Course of Changes in μ-Opioid Receptor mRNA Levels in the Periaqueductal Gray of Rat Brain by a Single or Repeated Injections of Antisense Oligodeoxynucleotides
• Long-Term Treatment With Morphine Increases the D-Serine Content in the Rat Brain by Regulating the mRNA and Protein Expressions of Serine Racemase and D-Amino Acid Oxidase
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Superconducting Current Density Profiles Estimated from the Flux Density Distribution in YBa_2Cu_3O_x Thin Films
• The serine racemase mRNA is expressed in both neurons and glial cells of the rat retina
• The serine racemase mRNA is predominantly expressed in rat brain neurons
• C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
• The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
• Formation of Zn-O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si
• Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
• Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
• Relationship between Water Diffusivity of Dielectric Films and Accelerated Hot Carrier Degradation Caused by Water
• Water Diffusivity of Dielectric Films Evaluated with Use of D_2O
• Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
• Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
• Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs
• Doping Profile Measurement of a Bonded Silicon-on-Insulator Wafer by Capacitance-Voltage Measurements
• Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
• Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition
• Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
• Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
• Solid State Reaction of Mo on Cubic and Hexagonal SiC
• Study of Fluctuation Suppression during Potential Formation in the Tandem Mirror GAMMA 10
• Correlation between Low-Frequency Fluctuations and Plasma Stored Energy in GAMMA 10
• Measuring Electron Temperature in the Tandem Mirror GAMMA 10 Plasma Using a Yttrium-Aluminum-Garnet Thomson Scattering System
• Long-Term Treatment With Morphine Increases the D-Serine Content in the Rat Brain by Regulating the mRNA and Protein Expressions of Serine Racemase and D-Amino Acid Oxidase
• Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
• Raman Spectra of NH_4-TCNQ-I and -II
• Neutral Transport Analysis of TRIAM-1M Plasma by Using Monte-Carlo Simulation
• Inhibitory effect of low-dose pentazocine on the development of antinociceptive tolerance to morphine
• The Antinociceptive Effects of Midazolam on Three Different Types of Nociception in Mice
• First Results of Simultaneous Multipoint Plasma Potential Measurements Using a Gold Neutral Beam Probe
• Ion Transport in Real and Velocity Space and Confinement in the GAMMA 10 Tandem Mirror
• Diazepam Enhances Production of Diazepam-Binding Inhibitor (DBI), a Negative Saliva Secretion Regulator, Localized in Rat Salivary Gland
• Analysis of Non-Gaussian Speckle by Nakagami m-Distribution
• 29aC09P Puffing gas flow modulation experiment in the GAMMA 10 tandem mirror
• Superconductivity in Ba(TM,Si)2 (TM = Pd, Pt, Cu, Ag, and Au) with the AlB2-Type Structure
• Measurement of Spatiotemporal Behavior of Alfvén-Ion-Cyclotron Waves in the GAMMA10 Tandem Mirror
• The Neutral Transport Analysis Based on Visible Light Measurement of Recycling and 3-Dimensional Simulation in GAMMA 10
• Density Fluctuation Measurement for Studying the Effect of Potential and Electric Field Formation in GAMMA 10
• Measurements of Oxygen Ion Spectra for Estimation of Electric Field Profiles in Cylindrical Plasmas
• Electron Density Measurement by Using a Multi-Channel Interferometer System in the Tandem Mirror GAMMA 10
• High-Speed Visible Imaging of the Central-Cell Plasmas in the GAMMA 10 Tandem Mirror
• Behavior of Hydrogen Fueled by Pellet Injection in the GAMMA 10 Tandem Mirror
• The Enhancing Effects of Peptidase Inhibitors on the Antinociceptive Action of [Met5]Enkephalin-Arg6-Phe7 in Rats
• Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC
• First Observation of Plasma Motion in GAMMA 10 Using a Fast Camera

もっと見る 閉じる

スポンサーリンク