Growth Process in Initial Stage of GaAs/GaP (001) by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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野村 卓志
静岡大学電子工学研究所
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Yoshikawa M
Department Of Electronics University Of Osaka Prefecture
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石川 賢司
四日市大学総合政策学部
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YOSHIKAWA Masayuki
Plasma Research Center, University of Tsukuba
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ISHIKAWA Kenji
Research Institute of Electronics, Shizuoka University
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Nomura Takashi
Research Institute for Cell Engineering (RICE), National Institute of Advanced Industrial Science an
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Yoshikawa Masanobu
Department Of Applied Physics Faculty Of Engineering Osaka University
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Yoshikawa Masaaki
Imra Material R & D Co Ltd.
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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野村 卓志
Department Of Advanced Materials Science Faculty Of Engineering Kagawa University
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Yoshikawa M
Choshu Ind. Co. Ltd. Yamaguchi Jpn
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YOSHIKAWA Masahiro
Research Institute of Electronics, Shizuoka University
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Hagino Minoru
Research Institute of Electronics, Shizuoka University
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Hagino Minoru
Research Institute Of Electronics Shizuoka University
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Ishikawa Kenji
Research Institute Of Electronics Shizuoka University
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Nomura Takashi
Research Institute For Cell Engineering (rice) National Institute Of Advanced Industrial Science And
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Yoshikawa Manabu
Department Of Physics Faculty Of Science Yamaguchi University
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