Nagai Kiyoko | Electrotechnical Lab.

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概要

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著作論文

Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
Formation of Zn-O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si
Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
Doping Profile Measurement of a Bonded Silicon-on-Insulator Wafer by Capacitance-Voltage Measurements
Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition
Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory

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