Maeda T | Electron Devices Division Electrotechnical Laboratory

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概要

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著作論文

Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
High-Density Recording Mechanism of Magnetooptieal Disks

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