DAGATA John | National Institute of Standards and Technology
スポンサーリンク
概要
関連著者
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GOTOH Yasuhito
Department of Electronic Science and Engineering, Kyoto University
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Gotoh Y
Tsukuba Univ. Ibaraki Jpn
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Harris James
Stanford University Stanford
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Maeda T
Central Research Laboratory Hitachi Ltd.
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Matsumoto K
Nippon Sanso Corp. Ibaraki Jpn
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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MAEDA Tatsuro
Electron Devices Division, Electrotechnical Laboratory
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Maeda T
Electron Devices Division Electrotechnical Laboratory
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Gotoh Yasuhito
Department Of Electronic Science And Engineering Kyoto University
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Gotoh Yoshikazu
Information Equipment Research Laboratory
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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Matsumoto K
Advanced Industrial Science And Technology:tsukuba University:crest
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GOTOH Yoshitaka
Electrotechnical Laboratory MITI
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DAGATA John
National Institute of Standards and Technology
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Harris James
Stanford University Department Of Electrical Engineering
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Matsumoto Koh
Tsukuba Laboratories Nippon Sanso Corporation
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Gotoh Yoshitaka
Electrotechnical Laboratory
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Matsumoto K
Electrotechnical Laboratory
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Matsumoto Kazuhiko
Electrotechnical Laboratory
著作論文
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process