Yoshida S | Sharp Corp. Nara Jpn

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概要

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著作論文

Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
High-Temperature Operation of Silicon Carbide MOSFET
Annealing Effects on Al and AN-Si Contacts with 3C-SiC
Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
Preparation of As-Deposited Bi-Sr-Ca-Cu-O Films with High T_c Superconducting Phase by Metalorganic Chemical Vapor Deposition
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
IN VITRO EFFECT OF CINNAMIC ALDEHYDE, A MAIN COMPONENT OF CINNAMOMI CORTEX, ON HUMAN PLATELET AGGREGATION AND ARACHIDONIC ACID METABOLISM
Anti-thrombotic and Anti-atherogenic Action of Eicosapentaenoic Acid
MECHANISM OF ANTI-PLATELET AGGREGATING ACTION OF DILAZEP
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs
Solid State Reaction of Mo on Cubic and Hexagonal SiC
Effect of Modified LDL on the Release of NO and PGI_2 from Rat Peritoneal Macrophages
A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

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