Okumura H | National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

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著作論文

Static Correlation and Dynamical Properties of Tb^-moments in Tb_2Ti_2O_7 : Neutron Scattering Study
Neutron Scattering Study of the Spin Correlation in the Spin Ice System Ho_2Ti_2O_7
Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
Effects of High-k Passivation Films on AlGaN/GaN HEMT
p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator (Special issue: Solid state devices and materials)
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
Nitridation of Gaps (001) Surface Studied by Auger Electron Spectroscopy
Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs

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