OKUMURA Hajime | Advanced Industrial Science and Technology (AIST), Power Electronics Research Center

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著作論文

Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face
Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors
Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

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