Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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Iijima Miwako
Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okamoto Mitsuo
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fukuda Kenji
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Nagano Takahiro
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
- Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel (Special Issue : Solid State Devices and Materials (1))
- Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on 4H-SiC C-Face
- Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition