Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
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概要
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We investigated the gate-length dependence of room-temperature DC operation in submicron-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The threshold voltage was reduced by the short-channel effect, which is only dependent on the aspect ratio of the gate length to the barrier-layer thickness. On the other hand, the transconductance was restricted by the source resistance, and was dependent on not only the gate length $L_{\text{G}}$ but also the source–gate length $L_{\text{SG}}$. The transconductance was increased by reducing $L_{\text{SG}}$ rather than $L_{\text{G}}$ in the submicron-gate HEMTs.
- 2007-04-30
著者
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SHIMIZU Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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YAGI Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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INADA Masaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Piao Guanxi
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Okumura Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nakajima Akira
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Arai Kazuo
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yagi Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ide Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Piao Guanxi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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