AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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SHIMIZU Mitsuaki
Optoelectronic Division, Electrotechnical Laboratory
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SUZUKI Akira
Graduate School of Engineering, Tokai University
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IDE Toshihide
Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji Un
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SUZUKI Akira
Course of Electronics, Graduate School of Engineering, Tokai University
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SHEN Xu-Qiang
Optoelectric Division, Electrotechnical Laboratory
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OKUMURA Hajime
Optoelectric Division, Electrotechnical Laboratory
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NEMOTO Toshio
Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji Un
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Nemoto Toshio
Department Of Science And Technology Graduate School Of Meiji University
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Nemoto T
Bunkyo University
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Suzuki Akira
R&d Association For Future Electron Devices
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