High-Quality Growth of AlN Epitaxial Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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KITAMURA Toshio
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Kitamura T
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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SIMIZU Mitsuaki
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Simizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Jeganathan Kulandaivel
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Kitamura Toshio
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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