Growth of Droplet-Free AlGaN Buffer Layer with $+$c Polarity by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
AlGaN growth on a (0001) sapphire substrate was investigated to realize a droplet-free buffer layer with the $+$c polarity by molecular beam epitaxy (MBE). By applying an aluminum flux intensity smaller than that of the effective nitrogen radical species for growth, a droplet-free AlGaN surface was achieved even under group-III-rich growth conditions. We found that lattice polarity depends on flux intensity ratio during the growth. The AlGaN buffer layer process is a promising method to achieve both the $+$c polarity and droplet-free growth of III-nitride films by MBE, which is essential for the improved performance of III-nitride semiconductor devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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TAKIGAWA Shinichi
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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FURUTA Kei
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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SHIMIZU Saburo
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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Kitamura Toshio
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu Saburo
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Takigawa Shinichi
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Furuta Kei
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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