MOCVD法による強誘電体Pb(Zr, Ti)O_3薄膜の諸特性とメモリーデバイスへの応用
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概要
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MOCVD法によりPb(Zr, Ti)O_3(PZT)薄膜を作製し、組成、結晶構造及び電気特性の制御性、成長温度、ステップカバレージ特性及び量産性等メモリデバイス開発にむけた観点からMOCVD法を検討した。その結果、強誘電体薄膜の成膜法としてMOCVD法が優れていることが分かった。さらにMOCVD法の問題点についても議論した。Ir系電極を用いたPZTキャパシタの分極反転疲労特性と電極膜厚との関係から、疲労現象において相互拡散が重要であることが分かった。また原子間力顕微鏡を用いた電流同時測定より、PZT膜の導電機構を考察した。
- 社団法人電子情報通信学会の論文
- 1998-03-13
著者
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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塩 忠
京都大学大学院工学研究科電子物性工学専攻
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塩[サキ] 忠
京都大学大学院工学研究科電子物性工学専攻
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