Okumura Hajime | Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

スポンサーリンク

概要

関連著者

もっと見る

著作論文

GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
High-Quality Growth of AlN Epitaxial Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas
Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
Growth of Droplet-Free AlGaN Buffer Layer with $+$c Polarity by Molecular Beam Epitaxy
Generation of Cubic Phase in Molecular-Beam-Epitaxy-Grown Hexagonal InGaN Epilayers on InN

もっと見る

スポンサーリンク