p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors
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概要
- 論文の詳細を見る
The normally off operation of AlGaN/GaN heterojunction field effect transistor (HFET) devices with a p-type InGaN cap layer under a gate electrode was demonstrated. The threshold gate voltage $V_{\text{Gth}}$ was 0.5 V, and the maximum transconductance $g_{\text{m}}$ was about 120 mS/mm. The maximum drain current $I_{\text{Dmax}}$ was more than 210 mA/mm. RF characteristics were also measured, and it was found that $ f_{\text{T}}$ is 2.1 GHz and $ f_{\text{max}}$ is 6.4 GHz when the gate length is 2 μm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Yagi Syuichi
National Institute Of Advanced Industrial Science And Technology
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Akutsu Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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Yagi Syuichi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Yano Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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