Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
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概要
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The effect of a thin AlN/GaN superlattice structure (SLs) interlayer on the strain properties in GaN films grown on Si(110) substrates is investigated. By comparing the strain states in GaN films without the interlayer, it is found that the strain in GaN films can be modulated by the SLs interlayer, which can be converted from a tensile state to a compressive one. The realization of the compressive strain state in the GaN film results in the suppression of the crack generation in the thick GaN growth, which is a general problem in the GaN growth on Si substrates. Using this simple technique, we successfully grow a crack-free continuous GaN film exceeding 4 μm thick. Therefore, the SLs interlayer is a promising structure in growing crack-free thick GaN on the Si substrate for optic and electronic device applications.
- 2013-08-25
著者
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Takahashi Tokio
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kawashima Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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