Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy

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概要

• 論文の詳細を見る
• Japan Institute of Metalsの論文
• 2002-07-01

著者

• MATSUHATA Hirofumi

  National Institute of Advanced Industrial Science and Technology

• OKUMURA Hajime

  National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C

• SHEN Xu-Qiang

  National Institute of Advanced Industrial Science and Technology

• Matsuhata H

  Toyota Technological Institute:(present Address)electrotechnical Laboratory

• Matsuhata Hirofumi

  National Institute Of Advanced Industrial Science And Technology (aist) Central 2

• Okumura Hajime

  National Institute Of Advanced Industrial Science And Technology

• Okumura H

  Neutron Scattering Laboratory Issp The University Of Tokyo

• Okumura Hajime

  National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn

• Shen Xu-qiang

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• Shen X‐q

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Shen Xu-qiang

  National Institute Of Advanced Industrial Science And Technology (aist) Central 2

• IWAMOTO Chihiro

  Engineering Research Institute, The University of Tokyo

• IKUHARA Yuuichi

  Engineering Research Institute, School of Engineering, University of Tokyo

• Iwamoto C

  Institute Of Engineering Innovation School Of Engineering University Of Tokyo

• Okumura Hajime

  National Institute Of Advanced Industrial Science And Technology (aist) Central 2

• Ikuhara Yuuichi

  Engineering Research Institute School Of Engineering University Of Tokyo

• IWAMOTO Chihiro

  Engineering Research Institute, Faculty of Engineering, Tire University of Tokyo

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