In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
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概要
- 論文の詳細を見る
We have performed in situ observation of the chemical vapor deposition (CVD) of silicon carbide (SiC), and investigated the relationship between the growth conditions and generation of clusters in the gas phase of the H2–SiH4–C3H8 gas system to realize the high-speed growth of SiC by CVD. It was found that cluster generation can be suppressed by decreasing the partial pressure of the process gases, i.e., increasing the H2 carrier gas flow rate, and decreasing the pressure and process gas flow rate. We concluded that clusters in the gas phase consist of not only Si droplets, but also SiC particles.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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ISHIDA Yuuki
National Institute of Advanced Industrial Science and Technology
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TAKAHASHI Tetsuo
National Institute of Advanced Industrial Science and Technology
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Yoshida Sadafumi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Arai Kazuo
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Umezono 1-1-1, Tsukuba-shi, Ibaraki 305-8568, Japan
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Takahashi Tetsuo
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Umezono 1-1-1, Tsukuba-shi, Ibaraki 305-8568, Japan
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Arai Kazuo
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Umezono 1-1-1, Tsukuba-shi, Ibaraki 305-8568, Japan
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Ishida Yuuki
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Umezono 1-1-1, Tsukuba-shi, Ibaraki 305-8568, Japan
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