The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
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概要
- 論文の詳細を見る
The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 °C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200 °C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm2/V$\cdot$s. The leakage current of gate oxide was of a few tens of nA/cm2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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LEE Kin
Japan Atomic Energy Agency
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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ISHIDA Yuuki
National Institute of Advanced Industrial Science and Technology
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TAKAHASHI Tetsuo
National Institute of Advanced Industrial Science and Technology
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology (AIST)
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TANAKA Yasunori
National Institute of Advanced Industrial Science and Technology (AIST)
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Arai Kazuo
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Ohshima Takeshi
Japan Atomic Energy Agency
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Kamiya Tomihiro
Japan Atomic Energy Research Institute (JAERI), Takasaki, Gunma 370-1292, Japan
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Kamiya Tomihiro
Japan Atomic Energy Agency, Takasaki, Gunma 370-1292, Japan
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Takahashi Tetsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ishida Yuuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Arai Kazuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kojima Kazutoshi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ohshima Takeshi
Japan Atomic Energy Research Institute (JAERI), Takasaki, Gunma 370-1292, Japan
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (JAERI), Takasaki, Gunma 370-1292, Japan
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