Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face
スポンサーリンク
概要
- 論文の詳細を見る
The interface properties of 4H-silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors and the electrical properties of MOS field-effect transistors (MOSFETS) on the (1120) face fabricated using pyrogenic reoxidation annealing (pyrogenic ROA) have been characterized. Pyrogenic ROA reduces the interface-state density near the conduction band, resulting in an increase in the inversion channel mobility and a decrease of the threshold voltage for the MOSFETS With both dry and wet gate-oxides. Eventually, a high channel mobility of 68 cm^2/(V・s) was successfully achieved in a MOSFET with wet gate-oxide using the pyrogenic ROA. On the (1120) face, the channel mobility of MOSFETs strongly depends on the interface-state density near the conduction band.
- 社団法人応用物理学会の論文
- 2001-11-15
著者
-
Fukuda K
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki
-
KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology (AIST)
-
Senzaki Junji
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Harada Shinsuke
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:u
-
KOSUGI Ryoji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
-
SUZUKI Seiji
R&D Association for Future Electron Devices, Advanced Power Device Laboratory
-
SUZUKI Takaya
R&D Association for Future Electron Devices, Advanced Power Device Laboratory
-
FUKUDA Kenji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
-
SENZAKI Junji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
-
Fukuda Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
SUZUKI Takaya
R&D Association for Future Electron Devices, Advanced Power Device Laboratory:Ultra-Low-Loss Power Device Technology Research
-
Harada Shinsuke
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
-
SUZUKI Seiji
R&D Association for Future Electron Devices, Advanced Power Device Laboratory:Ultra-Low-Loss Power Device Technology Research
-
KOSUGI Ryoji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
関連論文
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication