Harada Shinsuke | National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:u
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概要
- 同名の論文著者
- National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:uの論文著者
関連著者
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Harada Shinsuke
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:u
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FUKUDA Kenji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
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Fukuda Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Harada Shinsuke
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Senzaki Junji
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Kinoshita Akimasa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Fukuda K
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology (AIST)
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TANAKA Yasunori
National Institute of Advanced Industrial Science and Technology (AIST)
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Suzuki Kenji
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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KOSUGI Ryoji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
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SUZUKI Seiji
R&D Association for Future Electron Devices, Advanced Power Device Laboratory
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SUZUKI Takaya
R&D Association for Future Electron Devices, Advanced Power Device Laboratory
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OSHIMA Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST)
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SENZAKI Junji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
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Kinomura Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kato Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Katou Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Okamato Mitsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Nishizawa Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Morigasa Fukuyoshi
THERMO RIKO Co., Ltd., Mitaka, Tokyo 181-0013, Japan
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Endou Tomoyoshi
THERMO RIKO Co., Ltd., Mitaka, Tokyo 181-0013, Japan
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Isii Takuo
Nippon Thermonics Co., Ltd., Sagamihara, Kanagawa 229-1125, Japan
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Yashima Teruyuki
Nippon Thermonics Co., Ltd., Sagamihara, Kanagawa 229-1125, Japan
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Oshima Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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SUZUKI Takaya
R&D Association for Future Electron Devices, Advanced Power Device Laboratory:Ultra-Low-Loss Power Device Technology Research
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Suzuki Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
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SUZUKI Seiji
R&D Association for Future Electron Devices, Advanced Power Device Laboratory:Ultra-Low-Loss Power Device Technology Research
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KOSUGI Ryoji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body
著作論文
- Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment